Optical isolation module

ABSTRACT

An optical source for a photolithography tool includes a source configured to emit a first beam of light and a second beam of light, the first beam of light having a first wavelength, and the second beam of light having a second wavelength, the first and second wavelengths being different; an amplifier configured to amplify the first beam of light and the second beam of light to produce, respectively, a first amplified light beam and a second amplified light beam; and an optical isolator between the source and the amplifier, the optical isolator including: a plurality of dichroic optical elements, and an optical modulator between two of the dichroic optical elements.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a divisional of U.S. patent application Ser. No.15/790,576, filed Oct. 23, 2017, and titled OPTICAL ISOLATION MODULE,now allowed, which is a divisional of U.S. patent application Ser. No.14/970,402, filed Dec. 15, 2015, now U.S. Pat. No. 9,832,855, and titledOPTICAL ISOLATION MODULE, which claims the benefit of U.S. ProvisionalApplication No. 62/236,056, filed Oct. 1, 2015, and titled OPTICALISOLATION MODULE. Each of these prior applications is incorporatedherein by reference in its entirety.

TECHNICAL FIELD

This disclosure relates to an optical isolation module. The opticalisolation module can be used in an extreme ultraviolet (EUV) lightsource.

BACKGROUND

Extreme ultraviolet (“EUV”) light, for example, electromagneticradiation having wavelengths of around 50 nm or less (also sometimesreferred to as soft x-rays), and including light at a wavelength ofabout 13 nm, can be used in photolithography processes to produceextremely small features in substrates, for example, silicon wafers.

Methods to produce EUV light include, but are not necessarily limitedto, converting a material that has an element, for example, xenon,lithium, or tin, with an emission line in the EUV range in a plasmastate. In one such method, often termed laser produced plasma (“LPP”),the required plasma can be produced by irradiating a target material,for example, in the form of a droplet, plate, tape, stream, or clusterof material, with an amplified light beam that can be referred to as adrive laser. For this process, the plasma is typically produced in asealed vessel, for example, a vacuum chamber, and monitored usingvarious types of metrology equipment.

SUMMARY

In one general aspect, an optical source for a photolithography toolincludes a source configured to emit a first beam of light and a secondbeam of light, the first beam of light having a first wavelength, andthe second beam of light having a second wavelength, the first andsecond wavelengths being different; an amplifier configured to amplifythe first beam of light and the second beam of light to produce,respectively, a first amplified light beam and a second amplified lightbeam; and an optical isolator between the source and the amplifier, theoptical isolator including: a plurality of dichroic optical elements,and an optical modulator between two of the dichroic optical elements.

Implementations can include one or more of the following features. Theoptical modulator can include an acousto-optic modulator. Each of thedichroic optical elements can be configured to reflect light having thefirst wavelength and to transmit light having the second wavelength; andthe acousto-optic modulator can be positioned on a beam path between twoof the dichroic optical elements, the acousto-optic modulator can bepositioned to receive reflected light from the two of the dichroicoptical elements, the acousto-optic modulator can be configured totransmit the received light when the received light propagates in afirst direction relative to the acousto-optic modulator and to deflectthe received light away from the beam path when the received lightpropagates in a second direction relative to the acousto-opticmodulator, the second direction being different from the firstdirection. The first and second beams of light can be pulsed beams oflight. An energy of the first amplified light beam can be less than anenergy of the second amplified light beam. The first amplified lightbeam can have an energy sufficient to deform target material in a targetmaterial droplet into a modified target, the modified target includingtarget material in a geometric distribution that is different than adistribution of the target material in the target material droplet, thetarget material including material that emits extreme ultraviolet (EUV)light when in a plasma state, and the second amplified light beam has anenergy sufficient to convert at least some of the target material in themodified target to the plasma that emits EUV light.

The acousto-optic modulator can be positioned on a beam path between twoof the dichroic optical elements and can be positioned to receive lightreflected from the two of the dichroic optical elements, theacousto-optic modulator can be configured to receive a trigger signal,and the acousto-optic modulator can be configured to deflect receivedlight from the beam path in response to receiving the trigger signal,and to otherwise transmit received light onto the beam path.

The optical source also can include a second optical modulator betweenthe source and the amplifier. The second optical modulator is betweentwo of the dichroic optical elements, and the second optical modulatoris on a different beam path than the optical modulator.

The source can include a laser source. The source can include aplurality of sources, the first light beam being produced by one of thesources, and the second light beam being produced by another one of thesources. The source can include one or more pre-amplifiers.

In another general aspect, an apparatus for an extreme ultraviolet (EUV)light source includes a plurality of dichroic optical elements, each ofthe dichroic optical elements being configured to reflect light having awavelength in a first band of wavelengths and to transmit light having awavelength in a second band of wavelengths; and an optical modulatorpositioned on a beam path between two of the dichroic optical elements,the optical modulator positioned to receive reflected light from the twodichroic optical elements, and the optical modulator configured totransmit the received light when the received light propagates in afirst direction on the beam path and to deflect the received light awayfrom the beam path when the received light propagates in a seconddirection on the beam path, the second direction being different fromthe first direction, where the first band of wavelengths includes awavelength of a pre-pulse beam, and the second band of wavelengthsincludes a wavelength of a main beam.

Implementations can include one or more of the following features. Theoptical modulator can be an acousto-optic modulator. The apparatus alsocan include a control system configured to provide a trigger signal tothe acousto-optic modulator, and the acousto-optic modulator can beconfigured to deflect light away from the beam path in response toreceiving the trigger signal and otherwise transmits light onto the beampath.

The apparatus also can include a second optical modulator, where thesecond optical modulator is between two of the dichroic opticalelements, and the second optical modulator is positioned to receivelight transmitted by the two dichroic optical elements. The opticalmodulator and the second optical modulator can be between the same twodichroic optical elements, and the second optical modulator can be on asecond beam path that is different from the beam path.

In another general aspect, a method includes reflecting a first beam oflight at a first dichroic optical element, the reflected first beam oflight passing through an optical modulator and an amplifier to producean amplified first light beam; transmitting a second beam of lightthrough the first dichroic optical element, a second dichroic opticalelement, and the amplifier to produce an amplified second beam;receiving a reflection of the amplified first light beam at the seconddichroic optical element, wherein an interaction between the reflectionof the amplified first light beam and the second dichroic opticalelement directing the reflected amplified first light beam to theoptical modulator; and deflecting the reflection of the amplified firstlight beam at the optical modulator to thereby direct the reflection ofthe amplified first light beam away from a source of the first beam oflight.

Implementations can include one or more of the following features. Atrigger signal can be provided to the optical modulator after the firstbeam of light passes through the optical modulator and before thereflection of the amplified first light beam is at the opticalmodulator. The trigger signal can cause the optical modulator to be in astate in which the optical modulator deflects incident light.

The amplified first light beam can propagate toward an initial targetregion. The reflection of the first amplified light beam can be producedthrough an interaction between the first amplified light beam and atarget material droplet in the initial target region. The secondamplified light beam can propagate toward a target region, and aninteraction between target material and the second amplified light beamcan produce a reflection of the second amplified light beam, the methodfurther including: transmitting the reflection of the second amplifiedlight beam through the second dichroic optical element, and deflectingthe reflection of the second amplified light beam at a second opticalmodulator to thereby direct the reflection of the second amplified lightbeam away from a source of the second beam of light. The source of thefirst beam of light and the source of the second beam of light can bethe same source. The source of the first beam of light can be a firstoptical subsystem in the source, and the source of the second beam oflight can be a second optical subsystem in the source.

Implementations of any of the techniques described above may include amethod, a process, an optical isolator, a kit or pre-assembled systemfor retrofitting an existing EUV light source, or an apparatus. Thedetails of one or more implementations are set forth in the accompanyingdrawings and the description below. Other features will be apparent fromthe description and drawings, and from the claims.

BRIEF DESCRIPTION OF THE DRAWINGS

FIGS. 1 and 2 are block diagrams of exemplary optical systems.

FIGS. 3 and 6 are block diagrams of exemplary optical isolators.

FIGS. 4A and 4B are block diagrams of exemplary optical arrangementsthat can be used in the optical isolators of FIGS. 3 and 6.

FIGS. 5A and 5B are timing plots associated with an exemplary opticalmodulator.

FIG. 7 is a block diagram of an exemplary control system.

FIGS. 8A and 8B are a block diagram of a drive laser system for anextreme ultraviolet (EUV) light source.

FIGS. 9, 10A, 10B, 11A, 11B, 12A-12C, and 13A-13C are examples ofexperimental data collected with and without an optical isolator.

DETAILED DESCRIPTION

Referring to FIG. 1, a block diagram of an exemplary optical system 100is shown. The optical system 100 is part of an extreme ultraviolet (EUV)light source. The optical system 100 includes an optical source 102 thatproduces a light beam 110. The light beam 110 is emitted from theoptical source 102 and propagates along a path 112 in a direction ztoward a target region 115.

The target region 115 receives a target 120, which includes materialthat emits EUV light when converted to plasma. The target 120 isreflective at the wavelength or wavelengths of the light beam 110.Because the target 120 is reflective, when the light beam 110 interactswith the target 120, all or part of the beam 110 can be reflected alongthe path 112 in a direction that is different from the z direction. Thereflected portion of the beam 110 is labeled as the reflection 113. Thereflection 113 can travel on the path 112 in a direction that isopposite to the z direction and back into the optical source 102.Reflections of a forward-going beam (a beam that propagates from theoptical source 102 toward the target region 115), such as the reflection113, are referred to as “back reflections.”

The optical source 102 includes a light-generation module 104, anoptical isolator 106, and an optical amplifier 108. The light-generationmodule 104 is a source of light (such as one or more lasers, lamps, orany combination of such elements). The optical amplifier 108 has a gainmedium (not shown), which is on the beam path 112. When the gain mediumis excited, the gain medium provides photons to the light beam 110,amplifying the light beam 110 to produce the amplified light beam 110.The optical amplifier 108 can include more than one optical amplifierarranged with the respective gain mediums on the path 112. The opticalamplifier 108 can be all or part of a drive laser system, such as thedrive laser system 880 of FIG. 8B.

The light-generation module 104 emits the light beam 110 onto the beampath 112 toward the optical isolator 106. The optical isolator 106passes the light beam 110 in the z direction to the optical amplifier108 and toward the target region 115. However, the optical isolator 106blocks the back reflection 113. Thus, and as discussed in greater detailbelow, the optical isolator 106 prevents the back reflection fromentering the light-generation module 104. By preventing the backreflection from entering the light-generation module 104, additionaloptical power can be delivered to the target 120, which can lead to anincrease in the amount of generated EUV light.

Referring to FIG. 2, a block diagram of an EUV light source 200 thatincludes an exemplary optical source 202 is shown. The optical source202 can be used in place of the optical source 102 in the optical system100 (FIG. 1). The optical source 202 includes a light-generation module204, which includes two optical subsystems 204 a, 204 b, the opticalamplifier 108, and the optical isolator 106. The optical isolator 106 ison the path 112 and between the optical amplifier 108 and thelight-generation module 204.

The optical subsystems 204 a, 204 b produce first and second light beams210 a, 210 b, respectively. In the example of FIG. 2, the first lightbeam 210 a is represented by a solid line and the second light beam 210b is represented by a dashed line. The optical subsystems 204 a, 204 bcan be, for example, two lasers. In the example of FIG. 2, the opticalsubsystems 204 a, 204 b are two carbon dioxide (CO₂) lasers. However, inother implementations, the optical subsystems 204 a, 204 b are differenttypes of lasers. For example, the optical subsystem 204 a can be a solidstate laser, and the optical subsystem 204 b can be a CO₂ laser.

The first and second light beams 210 a, 210 b have differentwavelengths. For example, in implementations in which the opticalsubsystems 204 a, 204 b include two CO₂ lasers, the wavelength of thefirst light beam 210 a can be about 10.26 micrometers (μm) and thewavelength of the second light beam 210 b can be between 10.18 μm and10.26 μm. The wavelength of the second light beam 210 b can be about10.59 μm. In these implementations, the light beams 210 a, 210 b aregenerated from different lines of the CO₂ laser, resulting in the lightbeams 210 a, 210 b having different wavelengths even though both beamsare generated from the same type of source. The light beams 210 a, 210 balso can have different energies.

The light-generation module 204 also includes a beam combiner 209, whichdirects the first and second beams 210 a, 210 b onto the beam path 112.The beam combiner 209 can be any optical element or a collection ofoptical elements capable of directing the first and second beams 210 a,210 b onto the beam path 112. For example, the beam combiner 209 can bea collection of mirrors, some of which are positioned to direct thefirst beam 210 a onto the beam path 112 and others of which arepositioned to direct the second beam 210 b onto the beam path 112. Thelight-generation module 204 also can include a pre-amplifier 207, whichamplifies the first and second beams 210 a, 210 b within thelight-generation module 204.

The first and second beams 210 a, 210 b can propagate on the path 112 atdifferent times, but the first and second beams 210 a, 210 b follow thepath 112 and both beams 210 a, 210 b traverse substantially the samespatial region to the optical isolator 106, and through the opticalamplifier 108. As discussed with respect to FIGS. 3 and 6, the first andsecond beams 210 a, 210 b are separated within the optical isolator 106,and then propagate on the path 112 to the optical amplifier 108.

The first and second beams 210 a, 210 b are angularly disbursed by abeam delivery system 225 such that the first beam 210 a is directedtoward an initial target region 215 a, and the second beam 210 b isdirected toward a modified target region 215 b, which is displaced inthe −y direction relative to the initial target region 215 a. In someimplementations, the beam delivery system 225 also focuses the first andsecond beams 210 a, 210 b to locations within or near the initial andmodified target regions 215 a, 215 b, respectively.

In the example shown in FIG. 2, the initial target region 215 a receivesan initial target 220 a and the first beam 210 a. The first beam 210 ahas an energy that is sufficient to modify the geometric distribution oftarget material in the initial target 220 a (or to initiate the spatialreconfiguration of the target material) into a modified target that isreceived in the modified target region 215 b. The second beam 210 b isalso received in the modified target region 215 b. The second beam 210 bhas an energy that is sufficient to convert at least some of the targetmaterial in the modified target 220 b into a plasma that emits EUVlight. In this example, the first beam 210 a can be referred to as a“pre-pulse”, and the second beam 210 b can be referred to as the “mainpulse.”

The first beam 210 a can reflect off of the initial target 220 a, givingrise to a back reflection 213 a that can propagate along the path 112 ina direction other than the z direction and into the optical amplifier108. Because the first beam 210 a is used to modify a spatialcharacteristic of the initial target 220 a and is not intended toconvert the initial target 220 a into the plasma that emits EUV light,the first beam 210 a has a lower energy than the second beam 210 b.However, reflections of the first light beam 210 a can have more energythan reflections of the second light beam 201 b.

The first beam 210 a (and the reflection 213 a) propagates through theoptical amplifier 108 before the second beam 210 b. Thus, the gainmedium of the optical amplifier 108 can still be excited when thereflection 213 a passes through the gain medium of the optical amplifier108. As a result, the reflection 213 a can be amplified by the amplifier108. Further, the initial target 220 a can be substantially spherical inshape, dense, and highly reflective, whereas the modified target 220 bcan be a disk-like shape (or other non-spherical shape), less dense andless reflective. Due to the non-spherical shape, the modified target 220b can be positioned to reduce the amount of light that reflects backonto the path 112 due to an interaction between the second beam 210 band the modified target 220 b. For example, the modified target 220 bcan be tilted in the x-z and/or y-z plane relative to the direction ofpropagation of the light beam 210 b, or the modified target 220 b can beaway from the focus of the second beam 210 b.

In some implementations, the modified target 220 b is not tilted in thex-z and/or y-z plane, and the modified target 220 b is instead orientedsuch that the side of the modified target 220 b that has the greatestspatial extent is in a plane that is perpendicular to the direction ofpropagation of the second beam 210 b. Orienting the modified target 220b in this manner (which can be referred to as a “flat” targetorientation) can enhance the absorption of the second beam 210 b. Insome implementations, such an orientation can increase the absorption ofthe second beam 210 b by about 10% as compared to instances in which themodified target 220 b is tilted 20 degrees (°) relative to a plane thatis perpendicular to the direction of propagation of the second beam 210b. Orienting the modified target 220 b in a flat orientation canincrease the amount of reflected light that propagates back into theoptical source 202. However, because the optical source 202 includes theoptical isolator 106, the modified target 220 b can have a flatorientation because the optical isolator 106 acts to reduce the impactof reflections that can arise from the modified target 220 b in a flatorientation.

Finally, because the second beam 210 b has a relatively large energy,the forward propagation of the second beam 210 b through the amplifier108 saturates the gain medium, leaving little energy that the amplifier108 can provide to a back reflection of the second beam 210 b. As such,even though the first beam 210 a has a lower energy than the second beam210 b, the back reflection 213 a, which arises from the first beam 210a, can be substantial and can be larger than a back reflection arisingfrom the second beam 210 b.

As discussed below, the optical isolator 106 prevents back reflectionsarising from the first beam 210 a from entering the light-generationmodule 204. The optical isolator 106 also can prevent back reflectionsarising from the second beam 210 b from entering the light-generationmodule 204, and an example of such an implementation is shown in FIG. 6.Because the optical isolator 106 prevents potentially damaging backreflections from reaching the light-generation module 204, higher energylight beams can be generated from the light-generation module 204,resulting in more energy being delivered to the modified target 220 band more EUV light. In some implementations, the average amount of EUVlight produced can be increased by about 20% by using the opticalisolator 106.

Referring to FIG. 3, a block diagram of an exemplary optical isolator306 is shown. The optical isolator 306 can be used as the opticalisolator 106 in the optical source 102 (FIG. 1), the optical source 202(FIG. 2), or in any other optical source. The optical isolator 306 isdiscussed with respect to the optical source 202.

The optical isolator 306 includes a dichroic optical element 331,reflective elements 332, an optical modulator 335, and a dichroicelement 336. The optical isolator 306 also can include opticalarrangements 333, 334. The dichroic elements 331 and 336 are on the beampath 112.

The dichroic elements 331 and 336 can be any optical component that iscapable of separating or filtering light according to its wavelength.For example, the dichroic elements 331 and 336 can be dichroic mirrors,dichroic filters, dichroic beam splitters, or a combination of suchelements. The dichroic elements 331 and 336 can be identical to eachother, or they can have different configurations. In the example of FIG.3, the dichroic elements 331 and 336 reflect the wavelength (orwavelengths) of the first beam 210 a and transmit the wavelength (orwavelengths) of the second beam 210 b.

The first beam 210 a is reflected from the dichroic element 331 onto abeam path 314, which is between the dichroic elements 331 and 336 andhas a spatial extent and form defined by the reflective elements 332.The beam path 314 is different from the beam path 112. Thus, in theoptical isolator 306, the first beam 210 a does not remain on the beampath 112, and the first and second beams 210 a, 210 b are spatiallyseparated from each other. The first beam 210 a propagates on the beampath 314 through the optical arrangements 333, 334, and the opticalmodulator 335, before reaching the dichroic element 336, which reflectsthe beam 210 a back onto the beam path 112. The second beam 210 b passesthrough the dichroic element 331 and through the dichroic element 336,remaining on the beam path 112 while propagating through the opticalisolator 306.

The optical modulator 335 is on the beam path 314 between the dichroicelements 331 and 336. The optical modulator 335 is an optical elementthat is capable of deflecting incident light away from the path 314. Theoptical modulator 335 is adjustable between an open state and a closedstate such that the optical modulator 335 can transmit the first beam210 a and block the reflection 213 a (the reflection of the first beam210 a from the initial target 220 a).

The optical modulator 335 can be, for example, an acousto-opticmodulator (AOM). An acousto-optic modulator includes a medium (such asquartz or glass) connected to a transducer (such as a piezo-electrictransducer). Motion of the transducer causes sound waves to form in themedium, creating a spatially varying index of refraction in the medium.When the medium includes the sound waves, light incident on the mediumis deflected. When the sound waves are not present in the medium, theacousto-optic modulator transmits incident light without deflection.Other optical modulators can be used as the modulator 335. For example,the optical modulator 335 can be a Faraday rotator or an electro-opticmodulator (EOM). The modulator 335 can be a combination of such devices,and can include more than one of the same type of device.

In implementations in which the optical modulator 335 is anacousto-optic modulator, the transducer moves at a time when thereflection 213 a is expected to enter the path 314. At other times, thetransducer is not moved or vibrated. Thus, the beam 210 a (theforward-going “pre-pulse”) passes through the optical modulator 335,remaining on the path 314 and ultimately rejoining the path 112.However, the reflection 213 a is deflected (shown as deflection 217 a inFIG. 3) away from the path 314. As a result, the reflection 213 a doesnot reach the light-generation module 204 (FIG. 2).

Because the optical modulator 335 can be configured to transmit incidentlight only at certain times, the optical isolator 306 provides atime-gate based isolation technique as opposed to one that is based onpolarization. Additionally, the optical isolator 306 can be used incombination with a polarization-based isolation technique. For example,the polarization of the back reflections can be different than thepolarization of the forward-going beams 210 a, 210 b, and a polarizationisolator 303, which includes a polarizing element (such as a thin filmpolarizer), can be placed between the optical isolator 306 and theoptical amplifier 108 (FIGS. 1 and 2) to provide additional blocking ofback reflections. The polarizing element of the polarization isolator303 can be configured to primarily reject reflections of the secondlight beam 210 b, allowing the optical isolator 306 to be tailored toreject reflections of the first light beam 210 a. By using differenttechniques to reject reflections of the first light beam 210 a and thesecond light beam 210 b, the overall amount of reflections reaching thelight-generation module 204 from any source can be reduced.

In some implementations, the optical isolator 306 includes first andsecond optical arrangements 333, 334. The first beam 210 a passesthrough the first optical arrangement 333 before reaching the opticalmodulator 335. The first optical arrangement 333 can be any opticalelement or a collection of optical elements that reduces the beamdiameter of the first light beam 210 a. After passing through theoptical modulator 335, the first beam 210 a passes through the secondoptical arrangement 334. The second optical arrangement 334 can be anyoptical element or a collection of optical elements that enlarge thebeam diameter of the second light beam 210 b. The speed at which theoptical modulator 335 can be transitioned between being opened (in astate in which incident light is transmitted by the optical modulator335) or closed (in a state in which incident light is deflected orblocked by the optical modulator 335) increases as the beam diameterdecreases. Thus, by reducing the diameter of the first beam 210 a, thefirst optical arrangement 333 allows the optical modulator 335 to switchbetween being opened and closed, and vice versa, more quickly than inimplementations that lack the first optical arrangement 333. In someimplementations, the beam diameter of the beam 210 a can be reduced toabout 3 millimeters (mm).

The second optical arrangement 334 enlarges the diameter of the firstlight beam 210 a prior to directing the first light beam 210 a onto thepath 112. Additionally, the second optical arrangement 334 reduces thebeam diameter of the reflection 213 a before the reflection 213 areaches the optical modulator 335. By reducing the beam diameter of thereflection 213 a, the speed at which the optical modulator 335 must betransitioned between the open and closed states to block the reflection213 a is reduced.

Referring to FIGS. 4A and 4B, block diagrams of exemplary opticalarrangements 433 and 434, respectively, are shown. The opticalarrangements 433, 434 can be used as the optical arrangement 333, 334,respectively, in the optical isolator 306 (FIG. 3). The opticalarrangements 433, 434 are Galilean telescopes, which have one convexlens and one concave lens. In the optical arrangement 433, a concavelens 442 is between a convex lens 441 and the optical modulator 335. Inthe optical arrangement 434, a concave lens 443 is between the opticalmodulator 335 and a convex lens 444. Both of the arrangements 433, 434reduce the diameter of a beam that propagates toward the opticalmodulator 335. When the optical arrangements 433, 434 are used togetherin the configuration shown in FIG. 3, the beam diameter of the beam 210a is reduced prior to being incident on the optical modulator 335, andthe beam diameter of the beam 210 a is enlarged by the opticalarrangement 434 after passing through the optical modulator 335. Thebeam diameter of the reflection 213 a is reduced by the opticalarrangement 434 prior to reaching the optical modulator 335. Thereflection 213 a does not pass through the optical arrangement 433because the optical modulator 335 deflects the reflection 213 a from thebeam path 314.

The optical arrangements 433 and 434 can be identical Galileantelescopes or the arrangements 433 and 434 can includes lenses that havedifferent characteristics (such as different focal lengths).

Referring to FIG. 5A, an exemplary plot that shows the state of theoptical modulator 335 as a function of time is shown. FIG. 5B shows therelative placement of pulses of a beam 510 a and a reflection 513 a onthe same time axis that is shown in FIG. 5A. The pulse 510 a is a pulseof a beam that propagates through the system 200 (FIG. 2) when thesystem 200 is configured to use the optical isolator 306 (FIG. 3) as theoptical isolator 106, and the reflection 513 a is a reflection of thepulse 513 a from the initial target 220 a. The pulse 510 a is a pulse ofa pulsed light beam that is used as a “pre-pulse” to shape the initialtarget 220 a.

The optical modulator 335 is closed (deflects light from the path 314 orotherwise prevents incident light from remaining on the path 314) fromthe time t1 to the time t2. At the time t2, the optical modulator 335begins to transition to the open state. The optical modulator 335 isopen between the times t2 and t3, and, during this time range, theoptical modulator 335 transmits incident light. The optical modulator335 transitions to be closed at the time t3, and becomes closed again atthe time t4. As discussed above, the transition times (the time betweenthe time t2 and t3 and the time between t3 and t4) can be reduced byreducing the beam diameter of the light that is gated by the opticalmodulator 335.

Referring also to FIG. 5B, the times t2 and t3 are selected such thatthe pulse 510 a is incident on the optical modulator 335 at a time whenthe modulator 335 is open. Thus, the pulse 510 a passes through theoptical modulator 335 to reach the initial target 220 a. The times t3and t4 are selected so that the optical modulator 335 begins to closeafter transmitting the pulse 510 a and is closed when the reflection 513a is incident on the optical modulator 335. In this way, the opticalmodulator 335 provides a time-gate based isolation of the pre-pulsereflection 513 a.

In some implementations, the beam diameter of the pre-pulse 510 a andthe reflection 513 a can be 3 mm. In implementations in which theoptical modulator 335 is an acousto-optic modulator, the time that theoptical modulator takes to transition from open to close and vice versais determined by the beam diameter of the incident light and the speedof sound in the material of the optical modulator. The material can be,for example, germanium (Ge), which has an acoustic wave speed of 5500meters/second (m/s). In this example, the transition time (the time forthe optical modulator to transition from closed to open) is 375nanoseconds (ns). The delay between the pre-pulse 510 a and thereflection 513 a can be, for example, 400 ns. Thus, the pre-pulse 510 ais transmitted by the optical modulator 335 and the reflection 513 a isdeflected off of the path 314.

In some implementations, the optical modulator 335 is closed except forthe period of time at which the pulse 510 a is expected. By remainingclosed at other times, the optical modulator 335 prevents the reflection513 a from entering the light-generation module 204. Additionally, byremaining closed, the modulator 335 also prevents or reduces the impactof secondary reflections of the pulse 510 a. Elements, such as filters,pinholes, lenses, and tubes, on the path 112 are sources of glint andreflect incident light. These elements can reflect the pulse 510 b andcause secondary reflections that propagate on the path 112 and the path314, and these secondary reflections are in addition to the reflection513 a. By keeping the modulator 335 closed except when the pulse 510 ais incident on the modulator 335, the secondary reflections are alsoprevented from entering the light-generation module 204. Furthermore,the secondary reflections are removed from the path 314 and are thusprevented from propagating back onto the path 112. In this way, thesecondary reflections cannot reach the initial target region 215 a, themodified target region 215 b, or the region between the regions 215 aand 215 b. If the secondary reflections are able to reach these regions,the reflections can harm the target by breaking it apart before thetarget reaches the modified target region 215 b. The secondaryreflections can be referred to as forward pulse excited by reversepulses (FERs). The optical isolator 306 can help mitigate self-lasing,which can limit the maximum about of optical power delivered to thetarget region 215 b.

Referring to FIG. 6, a block diagram of another exemplary opticalisolator 606 is shown. The optical isolator 606 can be used instead ofthe optical isolator 106 in the system 100 (FIG. 1) or the system 200(FIG. 2). Additionally, the optical isolator 606 can be used in anyother optical system where the prevention of back reflections isdesirable. The optical isolator 606 is discussed with respect to aconfiguration in which the optical isolator 606 is used as the opticalisolator 106 in the system 200 (FIG. 2). The optical isolator 606 can beused with the polarization isolator 303 discussed above with respect toFIG. 3. In implementations that include the polarization isolator 303,the polarization isolator 303 is between the optical isolator 606 andthe optical amplifier 108 (FIGS. 1 and 2) to provide additional blockingof back reflections. The optical isolator 606 is similar to the opticalisolator 306 (FIG. 3), except the optical isolator 606 includes a secondoptical modulator 637. The second optical modulator 637 is on the path112, and is positioned between the dichroic optical element 331 and thedichroic optical element 336. Similar to the optical modulator 335, thesecond optical modulator 637 transmits incident light when in an openstate and deflects or blocks incident light when in a closed state. Thesecond light beam 210 b is emitted from the light-generation module 204and propagates on the path 112 to the dichroic optical element 331.

As discussed above, the dichroic optical element 331 transmits thewavelength of the second light beam 210 b. Thus, the second light beam210 b passes through the dichroic optical element 331 and is incident onthe second optical modulator 637. The second optical modulator 637 iscontrolled to be in the open state when the second light beam 210 b isincident on the modulator 637, and the second light beam 210 b passesthrough the modulator 637 and the dichroic optical element 336,remaining on the path 112 and reaching the modified target region 215 b(FIG. 2). Part of the second light beam 210 b is reflected from themodified target 220 b (in addition to converting at least some of thetarget material to plasma that emits EUV light) and can propagate as areflection 213 b along the path 112 in a direction other than the zdirection.

The reflection 213 b is transmitted by the dichroic optical element 336and remains on the path 112. The optical modulator 637 is closed whenthe reflection 213 b is incident on the modulator 637, and thereflection 213 b is deflected from the path 112 as deflected light 217b. Thus, the second modulator 637 prevents the reflection 213 b fromreaching the light-generation module 204 or reduces the amount of thereflection 213 b that reaches the light-generation module 204, reducingor eliminating self-lasing from the light-generation module 404 andallowing the second light beam 210 b to be of greater energy. In someimplementations, the optical modulator 637 deflects 30-40% of thereflection 213 b. The time during which the optical modulator 637 isopen can be reduced to further reduce the amount of self-lasing. Forexample, reducing the open time from 20 microseconds (μs) to 2 μs canreduce the self-lasing by 90%.

The second modulator 637 is closed except for the period of time atwhich the beam 210 b is expected. By remaining closed at other times,the second modulator 637 prevents the reflection 213 b from entering thelight-generation module 204. Additionally, by remaining closed, thesecond modulator 637 also prevents or reduces the impact of secondaryreflections from of the second beam 210 b. Elements, such as filters,pinholes, lenses, and tubes, on the path 112 are sources of glint andreflect incident light. These elements can reflect the second beam 210 band cause secondary reflections that are in addition to the reflection213 b (which is caused by an interaction between the second beam 210 band the modified target 220 b). By keeping the modulator 637 closedexcept when the second light beam 210 b is incident on the modulator637, the secondary reflections are also prevented from entering thelight-generation module 204 and the secondary reflections are removedfrom the path 112.

The second optical modulator 637 can be the same as the modulator 335,or the second optical modulator 637 and the modulator 335 can bedifferent types of modulators.

Referring to FIG. 7, a block diagram of a system 700 is shown. Thesystem 700 includes a light-generation module 704, a control system 740,and an optical modulator 735. The light-generation module 704 can be thelight-generation module 104 (FIG. 1), the light-generation module 204(FIG. 2), or any other system that generates light beams havingdifferent wavelengths. The optical modulator 735 can be the opticalmodulator 335 (FIG. 3) and/or the optical modulator 637 (FIG. 6).

The control system 740 provides a trigger signal 747 to the opticalmodulator 735. The trigger signal 747 is sufficient to cause the opticalmodulator 735 to change state or to begin to change state. For example,in implementations in which the optical modulator 735 is anacousto-optic modulator, the trigger signal 747 can cause the modulatorto transition to a closed state by causing a transducer to vibrate toform sound waves in the modulator. The control system 740 also canreceive data from the light-generation module 704 through a signal 741,and can provide data to the light-generation module 704 through a signal742. Further, the control system 740 also can receive data from theoptical module 735 via a signal 742.

The control system 740 includes an electronic storage 743, an electronicprocessor 744, and an input/output (I/O) interface 745. The electronicprocessor 744 includes one or more processors suitable for the executionof a computer program such as a general or special purposemicroprocessor, and any one or more processors of any kind of digitalcomputer. Generally, a processor receives instructions and data from aread-only memory or a random access memory or both. The electronicprocessor 744 can be any type of electronic processor.

The electronic storage 743 can be volatile memory, such as RAM, ornon-volatile memory. In some implementations, and the electronic storage743 can include both non-volatile and volatile portions or components.The electronic storage 743 can data and information that is used in theoperation of the optical modulator 735. For example, the electronicstorage 743 can store timing information that specifies when the firstand second beams 210 a, 210 b are expected to propagate through thesystem 200 (FIG. 2). The electronic storage 743 also can storeinstructions, perhaps as a computer program, that, when executed, causethe processor 744 to communicate with other components in the controlsystem 740, the light-generation module 704, and/or the opticalmodulator 735. For example, the instructions can be instructions thatcause the electronic processor 744 to provide a trigger signal 747 tothe optical modulator 735 at certain times that are specified by thetiming information stored on the electronic storage 743.

The I/O interface 745 is any kind of electronic interface that allowsthe control system 740 to receive and/or provide data and signals withan operator, the light-generation module 704, the optical modulator 735,and/or an automated process running on another electronic device. Forexample, the I/O interface 745 can include one or more of a visualdisplay, a keyboard, or a communications interface.

Referring to FIG. 8A, an LPP EUV light source 800 is shown. The opticalsystems 100 and 200 can be part of an EUV light source, such as thesource 800. The LPP EUV light source 800 is formed by irradiating atarget mixture 814 at a target location 805 with an amplified light beam810 that travels along a beam path toward the target mixture 814. Thetarget location 805, which is also referred to as the irradiation site,is within an interior 807 of a vacuum chamber 830. When the amplifiedlight beam 810 strikes the target mixture 814, a target material withinthe target mixture 814 is converted into a plasma state that has anelement with an emission line in the EUV range. The created plasma hascertain characteristics that depend on the composition of the targetmaterial within the target mixture 814. These characteristics caninclude the wavelength of the EUV light produced by the plasma and thetype and amount of debris released from the plasma.

The light source 800 also includes a target material delivery system 825that delivers, controls, and directs the target mixture 814 in the formof liquid droplets, a liquid stream, solid particles or clusters, solidparticles contained within liquid droplets or solid particles containedwithin a liquid stream. The target mixture 814 includes the targetmaterial such as, for example, water, tin, lithium, xenon, or anymaterial that, when converted to a plasma state, has an emission line inthe EUV range. For example, the element tin can be used as pure tin(Sn); as a tin compound, for example, SnBr₄, SnBr₂, SnH₄; as a tinalloy, for example, tin-gallium alloys, tin-indium alloys,tin-indium-gallium alloys, or any combination of these alloys. Thetarget mixture 814 can also include impurities such as non-targetparticles. Thus, in the situation in which there are no impurities, thetarget mixture 814 is made up of only the target material. The targetmixture 814 is delivered by the target material delivery system 825 intothe interior 607 of the chamber 630 and to the target location 605.

The light source 800 includes a drive laser system 815 that produces theamplified light beam 810 due to a population inversion within the gainmedium or mediums of the laser system 815. The light source 800 includesa beam delivery system between the laser system 815 and the targetlocation 805, the beam delivery system including a beam transport system820 and a focus assembly 822. The beam transport system 820 receives theamplified light beam 810 from the laser system 815, and steers andmodifies the amplified light beam 810 as needed and outputs theamplified light beam 810 to the focus assembly 822. The focus assembly822 receives the amplified light beam 810 and focuses the beam 810 tothe target location 805.

In some implementations, the laser system 815 can include one or moreoptical amplifiers, lasers, and/or lamps for providing one or more mainpulses and, in some cases, one or more pre-pulses. Each opticalamplifier includes a gain medium capable of optically amplifying thedesired wavelength at a high gain, an excitation source, and internaloptics. The optical amplifier may or may not have laser mirrors or otherfeedback devices that form a laser cavity. Thus, the laser system 815produces an amplified light beam 810 due to the population inversion inthe gain media of the laser amplifiers even if there is no laser cavity.Moreover, the laser system 815 can produce an amplified light beam 810that is a coherent laser beam if there is a laser cavity to provideenough feedback to the laser system 815. The term “amplified light beam”encompasses one or more of: light from the laser system 815 that ismerely amplified but not necessarily a coherent laser oscillation andlight from the laser system 815 that is amplified and is also a coherentlaser oscillation. The optical amplifiers in the laser system 815 caninclude as a gain medium a filling gas that includes CO₂ and can amplifylight at a wavelength of between about 9100 and about 11000 nm, and inparticular, at about 10600 nm, at a gain greater than or equal to 800.Suitable amplifiers and lasers for use in the laser system 815 caninclude a pulsed laser device, for example, a pulsed, gas-discharge CO₂laser device producing radiation at about 9300 nm or about 10600 nm, forexample, with DC or RF excitation, operating at relatively high power,for example, 10 kW or higher and high pulse repetition rate, forexample, 40 kHz or more. The optical amplifiers in the laser system 815can also include a cooling system such as water that can be used whenoperating the laser system 815 at higher powers.

FIG. 8B shows a block diagram of an example drive laser system 880. Thedrive laser system 880 can be used as part of the drive laser system 815in the source 800. The drive laser system 880 includes three poweramplifiers 881, 882, and 883. Any or all of the power amplifiers 881,882, and 883 can include internal optical elements (not shown).

Light 884 exits from the power amplifier 881 through an output window885 and is reflected off a curved mirror 886. After reflection, thelight 884 passes through a spatial filter 887, is reflected off of acurved mirror 888, and enters the power amplifier 882 through an inputwindow 889. The light 884 is amplified in the power amplifier 882 andredirected out of the power amplifier 882 through an output window 890as light 891. The light 891 is directed toward the amplifier 883 with afold mirror 892 and enters the amplifier 883 through an input window893. The amplifier 883 amplifies the light 891 and directs the light 891out of the amplifier 883 through an output window 894 as an output beam895. A fold mirror 896 directs the output beam 895 upward (out of thepage) and toward the beam transport system 820 (FIG. 8A).

Referring again to FIG. 8B, the spatial filter 887 defines an aperture897, which can be, for example, a circle having a diameter between about2.2 mm and 3 mm. The curved mirrors 886 and 888 can be, for example,off-axis parabola mirrors with focal lengths of about 1.7 m and 2.3 m,respectively. The spatial filter 887 can be positioned such that theaperture 897 coincides with a focal point of the drive laser system 880.

Referring again to FIG. 8A, the light source 800 includes a collectormirror 835 having an aperture 840 to allow the amplified light beam 810to pass through and reach the target location 805. The collector mirror835 can be, for example, an ellipsoidal mirror that has a primary focusat the target location 805 and a secondary focus at an intermediatelocation 845 (also called an intermediate focus) where the EUV light canbe output from the light source 800 and can be input to, for example, anintegrated circuit lithography tool (not shown). The light source 800can also include an open-ended, hollow conical shroud 850 (for example,a gas cone) that tapers toward the target location 805 from thecollector mirror 835 to reduce the amount of plasma-generated debristhat enters the focus assembly 822 and/or the beam transport system 820while allowing the amplified light beam 810 to reach the target location805. For this purpose, a gas flow can be provided in the shroud that isdirected toward the target location 805.

The light source 800 can also include a master controller 855 that isconnected to a droplet position detection feedback system 856, a lasercontrol system 857, and a beam control system 858. The light source 800can include one or more target or droplet imagers 860 that provide anoutput indicative of the position of a droplet, for example, relative tothe target location 805 and provide this output to the droplet positiondetection feedback system 856, which can, for example, compute a dropletposition and trajectory from which a droplet position error can becomputed either on a droplet by droplet basis or on average. The dropletposition detection feedback system 856 thus provides the dropletposition error as an input to the master controller 855. The mastercontroller 855 can therefore provide a laser position, direction, andtiming correction signal, for example, to the laser control system 857that can be used, for example, to control the laser timing circuitand/or to the beam control system 858 to control an amplified light beamposition and shaping of the beam transport system 820 to change thelocation and/or focal power of the beam focal spot within the chamber830.

The target material delivery system 825 includes a target materialdelivery control system 826 that is operable, in response to a signalfrom the master controller 855, for example, to modify the release pointof the droplets as released by a target material supply apparatus 827 tocorrect for errors in the droplets arriving at the desired targetlocation 805.

Additionally, the light source 800 can include light source detectors865 and 870 that measures one or more EUV light parameters, includingbut not limited to, pulse energy, energy distribution as a function ofwavelength, energy within a particular band of wavelengths, energyoutside of a particular band of wavelengths, and angular distribution ofEUV intensity and/or average power. The light source detector 865generates a feedback signal for use by the master controller 855. Thefeedback signal can be, for example, indicative of the errors inparameters such as the timing and focus of the laser pulses to properlyintercept the droplets in the right place and time for effective andefficient EUV light production.

The light source 800 can also include a guide laser 875 that can be usedto align various sections of the light source 800 or to assist insteering the amplified light beam 810 to the target location 805. Inconnection with the guide laser 875, the light source 800 includes ametrology system 824 that is placed within the focus assembly 822 tosample a portion of light from the guide laser 875 and the amplifiedlight beam 810. In other implementations, the metrology system 824 isplaced within the beam transport system 820. The metrology system 824can include an optical element that samples or re-directs a subset ofthe light, such optical element being made out of any material that canwithstand the powers of the guide laser beam and the amplified lightbeam 810. A beam analysis system is formed from the metrology system 824and the master controller 855 since the master controller 855 analyzesthe sampled light from the guide laser 875 and uses this information toadjust components within the focus assembly 822 through the beam controlsystem 858.

Thus, in summary, the light source 800 produces an amplified light beam810 that is directed along the beam path to irradiate the target mixture814 at the target location 805 to convert the target material within themixture 814 into plasma that emits light in the EUV range. The amplifiedlight beam 810 operates at a particular wavelength (that is alsoreferred to as a drive laser wavelength) that is determined based on thedesign and properties of the laser system 815. Additionally, theamplified light beam 810 can be a laser beam when the target materialprovides enough feedback back into the laser system 815 to producecoherent laser light or if the drive laser system 815 includes suitableoptical feedback to form a laser cavity.

Referring to FIG. 9, a plot 900 of example test data for an opticalisolator such as the optical isolator 306 (FIG. 3) is shown. The plot900 shows the measured power of a reverse-going pre-pulse beam as afunction of time with the optical isolator in an ON state and in an OFFstate. The reverse-going pre-pulse beam can be a beam such as thereflection 213 a (FIG. 2), which arises from the interaction between thefirst beam 210 a (FIG. 2) and the initial target 220 a (FIG. 2) asdiscussed above. In the ON state, the optical isolator blocks or reducesthe effects of the reflection 213 a by deflecting all or part of thereflection 213 a from the beam path 314 so that the reflection 213 athat reaches the light-generation module 204 is reduced or eliminated.In the ON state, the optical isolator can operate, for example, asdiscussed with respect to FIGS. 5A and 5B. In the OFF state, the opticalisolator is not active and the system operates as if the opticalisolator is not present.

In the example of FIG. 9, the optical isolator is in the OFF statebetween the times 905 and 910, and otherwise is in the ON state. Whenthe optical isolator is in the ON state, the power of the reflection 213a that reaches the light-generation module 204 is very low, and is closeto zero Watts (W). For example, the power of the reflection 213 a thatreaches the light-generation module 204 can be about or below 0.1 W. Asdiscussed above, it is desirable to reduce the power of the reflection213 a that reaches the light-generation module 204. In contrast, whenthe optical isolator is in the OFF state, the power of the reflection213 a that reaches the light-generation module 204 is greater than 0 andcan be between about 4.2 W and 18.2 W. Furthermore, when the opticalisolator is in the OFF state, the power of the reflection 213 a thatreaches the light-generation module 204 varies quite a bit, which canlead to instabilities in the system. Thus, in addition to reducing theamount of power in the reflection 213 a, the optical isolator alsoreduces the variation of the power of the reflection, resulting in amore stable system.

Referring to FIGS. 10A and 10B, additional example test data are shown.FIG. 10A shows the energy of the produced EUV light as a function ofpulse number when the optical isolator (such as the optical isolator306) is not present in the system, and FIG. 10B shows the energy of theproduced EUV light as a function of pulse number when the opticalisolator is present in the system. When the optical isolator is notpresent, the average energy of the EUV light is 3.4 milliJoules (mJ).When the optical isolator is present, the average EUV energy increasesto 4.1 mJ.

Referring also to FIGS. 11A and 11B, the produced EUV light is also morestable when the optical isolator is present in the system. FIG. 11Ashows a distribution of particular values of the energy of the producedEUV light when the optical isolator is not present, and FIG. 11B showsthe distribution of particular values of the energy of the produced EUVlight when the optical isolator is present. The distribution of energyvalues of FIG. 11B (when the optical isolator is used) shows that higherenergy values occur more often and that all of the energy values arecontained in a smaller range as compared to a system that does notemploy the optical isolator. Thus, using an optical isolator (such asthe optical isolator 306) results in EUV light of higher energy and alsoresults in EUV light that is more stable (varies less).

Referring to FIGS. 12A-12C and 13A-13C, additional example test data areshown. FIGS. 12A-12C show a target 1200 at three times in a system thatlacks an optical isolator such as the optical isolator 306, and FIGS.13A-13C show a target 1300 at three times in a system that includes anoptical isolator such as the optical isolator 306. The targets 1200 and1300 include the target material that emits EUV light when in a plasmastate. The targets 1200 and 1300 are shown at times that coincide withthe targets 1200 and 1300 being in a location that receives a pre-pulse(such as the initial target region 215 a of FIG. 2) and a location thatreceives a main pulse (such as the modified target region 215 b of FIG.2).

As discussed above with respect to FIGS. 5A and 5B, the optical isolatorcan reduce or eliminate secondary reflections from objects such as pinholes, lenses, tubes, and optical elements. When present, the secondaryreflections can reach the target as it moves from the initial targetregion 215 a to the modified target region 215 b. FIGS. 12A-12C show anexample of the secondary reflections interacting with the target 1200over time. As shown in FIGS. 12B and 12C as compared to 12A, the target1200 spreads out spatially as time passes and breaks apart. FIGS.13A-13C show an example of a system that uses the optical isolator (suchas the optical isolator 306) to reduce or eliminate the secondaryreflections. As compared to the target 1200 (FIGS. 12A-12C), the target1300 (FIGS. 13A-13C) has a cleaner spatial profile, which can lead toincreased absorption of an incident light beam and more target materialavailable for interaction with the second beam 210 b (and thus more EUVlight produced). Additionally, because the target 1300 is used with anoptical source that includes the optical isolator, the target 1300 canhave a flat orientation relative to the direction of propagation of theincident light beam while still reducing or eliminating the effects ofback reflections and secondary reflections on the optical source.

Other implementations are within the scope of the claims.

In implementations in which the optical subsystems 204 a, 204 b (FIG. 2)are different types of optical subsystems, the optical subsystem 204 acan be a rare-earth-doped solid state laser (such as a Nd:YAG or anerbium-doped fiber (Er:glass)), and the wavelength of the first lightbeam 210 a can be 1.06 μm. The optical subsystem 204 b can be a CO₂laser, and the wavelength of the light beam 210 b can be, for example,10.26 μm. In these implementations, the first and second beams 210 a,210 b can be amplified in separate optical amplifiers and can followseparate paths through the system 200. Also, two separate opticalisolators can be used, one for the first light beam 210 a and itscorresponding reflections, and another for the light beam 210 b and itscorresponding reflections.

The pre-amplifier 207 (FIG. 2) can have multiple stages. In other words,the pre-amplifier 207 can include more than one amplifier in series andplaced on the path 112.

The light beams 110, 210 a, and 210 b can be pulsed light beams. Thepower of a pulse of the first light beam 210 a (or the pulse 510 a) canbe, for example, 20-40 Watts (W). The power of a pulse of the secondlight beam 210 b can be, for example, 300-500 W.

The first beam of light 210 a can be any type of radiation that can acton the initial target 220 a to form the modified target 220 b. Forexample, the first beam of light 210 can be a pulsed optical beamgenerated by a laser. The first beam of light 210 can have a wavelengthof about 1-10.6 μm. The duration of a pulse of the first beam of light210 a can be, for example, 20-70 nanoseconds (ns), less than 1 ns, 300picoseconds (ps), between 100-300 ps, between 10-50 ps, or between10-100 ps. The energy of a pulse of the first beam of light 210 a canbe, for example, 15-60 milliJoules (mJ). When the pulse of the firstbeam of light 210 a has a duration of 1 ns or less, the energy of thepulse can be 2 mJ. The time between a pulse of the first light beam 210a and a pulse of the second light beam 210 b can be, for example, 1-3microseconds (μs).

The initial target 220 a and the target 115 can have any thecharacteristics of the target mixture 814. For example, the initialtarget 220 a and the target 115 can include tin.

The optical systems 100 and 200 can include the polarization isolator303. In these implementations of the optical system 100, thepolarization isolator 303 is between the optical isolator 106 and theoptical amplifier 108.

What is claimed is:
 1. An apparatus for an extreme ultraviolet (EUV)light source, the apparatus comprising: a plurality of dichroic opticalelements, each of the dichroic optical elements being configured toreflect light having a wavelength in a first band of wavelengths and totransmit light having a wavelength in a second band of wavelengths; andan optical modulator positioned on a beam path between two of thedichroic optical elements, the optical modulator positioned to receivereflected light from the two dichroic optical elements, and the opticalmodulator configured to transmit the received light when the receivedlight propagates in a first direction on the beam path and to deflectthe received light away from the beam path when the received lightpropagates in a second direction on the beam path, the second directionbeing different from the first direction, wherein the first band ofwavelengths comprises a wavelength of a pre-pulse beam, and the secondband of wavelengths comprises a wavelength of a main beam.
 2. Theapparatus of claim 1, wherein the optical modulator comprises anacousto-optic modulator.
 3. The apparatus of claim 2, wherein theapparatus further comprises a control system configured to provide atrigger signal to the acousto-optic modulator, and wherein theacousto-optic modulator deflects light away from the beam path inresponse to receiving the trigger signal and otherwise transmits lightonto the beam path.
 4. The apparatus of claim 1, further comprising asecond optical modulator, wherein the second optical modulator isbetween two of the dichroic optical elements, and the second opticalmodulator is positioned to receive light transmitted by the two dichroicoptical elements.
 5. The apparatus of claim 4, wherein the opticalmodulator and the second optical modulator are between the same twodichroic optical elements, and the second optical modulator is on asecond beam path that is different from the beam path.
 6. The apparatusof claim 1, wherein each of the plurality of dichroic optical elementscomprises a dichroic mirror, a dichroic filter, or a dichroic beamsplitter.
 7. The apparatus of claim 1, wherein the received lightpropagating in the second direction comprises a reflection of thepre-pulse beam.
 8. An apparatus comprising: a plurality of dichroicoptical elements, each of the dichroic optical elements being configuredto direct light having a wavelength in a first band of wavelengths ontoa first beam path and to direct light having a wavelength in a secondband of wavelengths onto a second beam path, and the plurality ofdichroic optical elements comprising at least a first dichroic opticalelement and a second dichroic optical element; a first opticalarrangement configured to be positioned between the first dichroicoptical element and the second dichroic optical element, the firstoptical arrangement configured to reduce a beam diameter of an incidentlight beam; an optical modulator configured to be positioned between thefirst optical arrangement and the second dichroic optical element; and asecond optical arrangement configured to be positioned between theoptical modulator and the second dichroic optical element, the secondoptical arrangement configured to increase the beam diameter of anincident light beam, wherein the optical modulator is adjustable betweenan open state and a closed state, the optical modulator transmitsincident light when in the open state and deflects incident light whenin the closed state, the first dichroic optical element is positioned toreceive a first pulsed light beam and a second pulsed light beam, awavelength of the first pulsed light beam is in the first band ofwavelengths, and a wavelength of the second pulsed light beam is in thesecond band of wavelengths.
 9. The apparatus of claim 8, wherein thefirst and second optical arrangements and the optical modulator are onthe first beam path.
 10. The apparatus of claim 8, wherein the firstlight beam comprises a pre-pulse light beam, and the second light beamcomprises a main pulse light beam, the pre-pulse light beam beingconfigured to shape an initial target into a shaped target, and the mainpulse light beam being configured to convert at least some targetmaterial in the shaped target into a plasma that emits extremeultraviolet (EUV) light.
 11. The apparatus of claim 8, wherein theoptical modulator comprises at least one acousto-optic modulator. 12.The apparatus of claim 8, wherein the first optical arrangement and thesecond optical arrangement each comprise at least one lens.
 13. A methodcomprising: reflecting a first beam of light at a first dichroic opticalelement, the reflected first beam of light passing through an opticalmodulator and an amplifier to produce an amplified first light beam;transmitting a second beam of light through the first dichroic opticalelement, a second dichroic optical element, and the amplifier to producean amplified second beam; receiving a reflection of the amplified firstlight beam at the second dichroic optical element, wherein aninteraction between the reflection of the amplified first light beam andthe second dichroic optical element directing the reflected amplifiedfirst light beam to the optical modulator; and deflecting the reflectionof the amplified first light beam at the optical modulator to therebydirect the reflection of the amplified first light beam away from asource of the first beam of light.
 14. The method of claim 13, furthercomprising providing a trigger signal to the optical modulator after thefirst beam of light passes through the optical modulator and before thereflection of the amplified first light beam is at the opticalmodulator.
 15. The method of claim 14, wherein the trigger signal causesthe optical modulator to be in a state in which the optical modulatordeflects incident light.
 16. The method of claim 13, wherein theamplified first light beam propagates toward an initial target region.17. The method of claim 16, wherein the reflection of the firstamplified light beam is produced through an interaction between thefirst amplified light beam and a target material droplet in the initialtarget region.
 18. The method of claim 17, wherein the second amplifiedlight beam propagates toward a target region, and an interaction betweentarget material and the second amplified light beam produces areflection of the second amplified light beam, the method furthercomprising: transmitting the reflection of the second amplified lightbeam through the second dichroic optical element, and deflecting thereflection of the second amplified light beam at a second opticalmodulator to thereby direct the reflection of the second amplified lightbeam away from a source of the second beam of light.
 19. The method ofclaim 18, wherein the source of the first beam of light and the sourceof the second beam of light are the same source.
 20. The method of claim19, wherein the source of the first beam of light is a first opticalsubsystem in the source, and the source of the second beam of light is asecond optical subsystem in the source.